The Common Emitter (CE) configuration is one of the three basic BJT (Bipolar Junction Transistor) configurations, along with the Common Base (CB) and Common Collector (CC) configurations. It is the most widely used because it provides high current gain, high voltage gain, and high power gain, making it ideal for amplifiers, switching circuits, oscillators, and […]
Tag: Leakage current
PN Junction Diode: Symbol, Construction, Working and VI Characteristics Explained
The PN junction diode is one of the most important and widely used semiconductor devices in electronics. It is created by joining a P-type semiconductor and an N-type semiconductor within a single crystal structure. This simple yet powerful device allows electric current to flow easily in one direction while offering very high resistance to current […]
TVS Diode: Symbol, Construction, Working, Types and Applications
A TVS (Transient Voltage Suppression) diode is a specialized semiconductor device used to protect electronic circuits from high-voltage transients such as electrostatic discharge (ESD), lightning surges, and switching spikes. It responds extremely fast and clamps overvoltage to a safe level before they damage sensitive components. Modern electronic systems are highly sensitive to voltage spikes caused […]
Diac Symbol, Construction, VI Characteristics and Applications
The Diac is basically a two-terminal device. Here we will discuss the symbol, construction, VI characteristics, advantages, disadvantages and applications of Diac. It is such a combination of semiconductor layers that allows triggering in both directions. The Diac is used as a triggering device for the TRIAC circuits. What is a DIAC? A DIAC (Diode […]



